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28C256T
256K EEPROM (32K x 8-Bit) EEPROM
VCC GND DATA INPUTS/OUTPUTS I/O0 - I/O7
OE WE CE OE, CE, and WE LOGIC
DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX
Y DECODER ADDRESS INPUTS X DECODER
IDENTIFICATION
Logic Diagram
Memory
FEATURES:
* RAD-PAK(R) radiation-hardened against natural space radiation * Total dose hardness: - > 100 Krad (Si), dependent upon space mission * Excellent Single Event Effects: - SELTH LET: > 120 MeV/mg/cm2 - SEUTH LET (read mode): > 90 MeV/mg/cm2 - SEUTH LET (write mode): > 18 MeV/mg/cm2 * Package: - 28 pin RAD-PAK(R) flat pack - 28 pin RAD-PAK(R) DIP - JEDEC approved byte wide pinout * High Speed: - 120, 150 ns maximum access times available * High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention * Page Write Mode: - 1 to 64 bytes * Low power dissipation: - 15 mA active current (cycle = 1 s) - 20 A standby current (CE = VCC)
DESCRIPTION:
Maxwell Technologies' 28C256T high density 256k-bit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C256T is capable of in-system electrical byte and page programmability. It has a 64-Byte page programming function to make its erase and write operations faster. It also features data polling to indicate the completion of erase and programming operations. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
02.18.02 Rev 5
All data sheets are subject to change without notice
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(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 1. 28C256T PINOUT DESCRIPTION
PIN *10-3, 25, 24, 21, 23, 2, 26, 1 11-13, 15-19 22 20 27 28 14 SYMBOL A0-A14 I/O0-I/O7 OE CE WE VCC VSS DESCRIPTION Address Input/Output Output Enable Chip Enable Write Enable Power Supply Ground
28C256T
*Refer to diagram on Page 1 for pin relationship.
TABLE 2. 28C256T ABSOLUTE MAXIMUM RATINGS
Memory
PARAMETER Supply Voltage (Relative to VSS) Input Voltage (Relative to VSS) Operating Temperature Range2 Storage Temperature Range 1. VIN = -3.0 V for pulse width > 50 ns. 2. Including electrical characteristics and data retention.
SYMBOL VCC VIN TOPR TSTG
MIN -0.6 -0.51 -55 -65
MAX 7.0 7.0 125 150
UNITS V V
C C
TABLE 3. 28C256T DELTA LIMITS
PARAMETER ICC1 ICC2 ICC3A ICC3B VARIATION 10% 10% 10% 10%
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All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 4. 28C256T RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage SUBGROUPS 1 1 1 1 Thermal Impedance -- Flat Package Thermal Impedance -- DIP Package Operating Temperature Range 1. VIL min= -1.0V for pulse width < 50 ns. 1 1 1 SYMBOL VCC VIL VIH VH MIN 4.5 -0.31 2.2 VCC -0.5 ---55
28C256T
MAX 5.5 0.8 VCC +0.3 VCC +1 0.87 0.86 125 UNITS V V V V C/W C/W
C
JC JC
TOPR
TABLE 5. 28C256T CAPACITANCE1
(TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance: VIN = 0V 1 Output Capacitance: VOUT = 0V 1 1. Guaranteed by design. SYMBOL CIN COUT MIN --MAX 6 12 UNITS pF pF
Memory
TABLE 6. 28C256T DC ELECTRICAL CHARACTERISTICS
(VCC = 5 V 10%, TA = -55 TO +125 C UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current CONDITIONS VCC = 5.5 V, VIN = 5.5 V VCC = 5.5 V, VOUT = 5.5 V/0.4 V CE = VCC CE = VIH IOUT = 0 mA Duty = 100% VCC = 5.5 V Cycle = 1 us IOUT = 0mA Duty = 100% VCC = 5.5 V Cycle = 150 ns Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage ILO = 2.1 mA IOH = -400 uA 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 VIL VIH VH VOL VOH SUBGROUPS 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 SYMBOL ILI ILO ICC1 ICC2 ICC3 MIN -------2.2 VCC -0.5 -2.4 MAX 2 2 20 1 15 50 0.8 --0.4 -V V V V V UNITS uA uA uA mA mA
02.18.02 Rev5
All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
28C256T
TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION1
(VCC = 5V 10%, TA = -55 TO 125 C UNLESS OTHERWISE SPECIFIED) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -120 -150 CE to Output Delay OE = VIL, WE = VIH -120 -150 OE to Output Delay CE = VIL, WE = VIH -120 -150 Output Hold from Address CE = OE = VIL, WE = VIH -120 -150 OE (CE) High to Output Float CE = VIL, WE = VIH 2 -120 -150 SUBGROUPS 9, 10, 11 SYMBOL tACC --9, 10, 11 tCE --9, 10, 11 tOE 0 0 9, 10, 11 tOH 0 0 9, 10, 11 tDF 0 0 50 50 --ns 75 75 ns 120 150 ns 120 150 ns MIN MAX UNITS ns
Memory
1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
(VCC = 5V 10%, TA = -55 TO 125 C UNLESS OTHERWISE SPECIFIED)
PARAMETER Address Setup Time -120 -150 CE to Write Setup Time -120 -150 WE to Write Setup Time -120 -150 WE Hold Time -120 -150 SUBGROUPS SYMBOL tAS MIN1 0 0 tCS 2 TYP --MAX --ns 0 0 tWS 3 ----ns 0 0 tWH 3 0 0 ------ns UNITS ns
9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11
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All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
(VCC = 5V 10%, TA = -55 TO 125 C UNLESS OTHERWISE SPECIFIED)
PARAMETER WE Pulse Width -120 -150 CE Pulse Width -120 -150 Address Hold Time -120 -150 Data Setup Time -120 -150 Data Hold Time -120 -150 Chip Enable Hold Time2 -120 -150 Output Enable to Write Setup Time -120 -150 Output Enable Hold Time -120 -150 Data Latch Time4 -120 -150 Write Cycle Time -120 -150 Byte Load Window4 -120 -150 Byte Load Cycle4 -120 -150 Write Start Time -120 -150 1. 2. 3. 4. Use this device in a longer cycle than this value. WE controlled operation. CE controlled operation. Not tested.
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28C256T
SYMBOL tWP 2 200 250 tCW 3 200 250 --------------230 280 --100 100 ------ns 150 150 --ns 75 100 --ns 10 10 --ns 0 0 --ns 0 0 --ns 0 0 --ns ----ms --10 10 us ----us 0.55 0.55 30 30 ns 150 150 ------MIN1 TYP MAX UNITS ns
TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS
SUBGROUPS
9, 10, 11
9, 10, 11
tAH
9, 10, 11
tDS
9, 10, 11
tDH
Memory
9, 10, 11
tCH
9, 10, 11
tOES
9, 10, 11
tOEH
9, 10, 11
tDL
9, 10, 11
tWC
9, 10, 11
tBL
9, 10, 11
tBLC
9, 10, 11
tDW
All data sheets are subject to change without notice
5
(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
TABLE 9. 28C256T MODE SELECTION 1
MODE Write Standby Write Deselect Write Inhibit Data\ Polling 1. X = Does not matter. CE VIL VH VIL VIL X X VIL OE VIL X VIH VIH X VIL VIL
28C256T
WE VIH X VIL VIH VIH X VIH I/O DOUT HIGH-Z DIN HIGH-Z --DATA-OUT (I/O7)
Memory
02.18.02 Rev5
All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
FIGURE 1. READ TIMING WAVEFORM
28C256T
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
Memory
02.18.02 Rev5
All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
28C256T
Memory
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
28C256T
Memory
FIGURE 6. DATA POLLING TIMING WAVEFORM
02.18.02 Rev5
All data sheets are subject to change without notice
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(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
EEPROM APPLICATION NOTES
28C256T
This application note describes the programming procedures for the EEPROM modules and the details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 64 bytes to be written corresponding to the undefined address (A0 to A5). Loading the first byte of data, the data load window opens 30 s for the second byte. In the same manner each additional byte of data can be loaded within 30 s. In case CE and WE are kept high for 100(s after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM.
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
Memory
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
02.18.02 Rev5
All data sheets are subject to change without notice
10
(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
28C256T
Memory
28 PIN RAD-PAK(R) FLAT PACKAGE
SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N 0.390 0.040 0.005 0.165 0.015 0.003 -0.380 -0.180 0.030 DIMENSION NOM 0.177 0.017 0.005 0.720 0.410 -0.240 0.085 0.050 BSC 0.400 0.050 0.027 28 0.410 0.053 -MAX 0.189 0.022 0.009 0.740 0.420 0.440 ---
F28-03 Note: All dimensions in inches.
02.18.02 Rev5
All data sheets are subject to change without notice
11
(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
28C256T
Memory
28 PIN RAD-PAK(R) DUAL IN LINE PACKAGE
SYMBOL MIN A b b2 c D E eA eA/2 e L Q S1 S2 N 0.140 0.015 0.005 0.005 -0.014 0.045 0.008 -0.510 DIMENSION NOM 0.177 0.018 0.050 0.010 1.400 0.595 0.600 BSC 0.300 BSC 0.100 BSC 0.150 0.040 0.025 -28 0.160 0.060 --MAX 0.225 0.026 0.065 0.018 1.485 0.620
D28-03 Note: All dimensions in inches.
02.18.02 Rev5
All data sheets are subject to change without notice
12
(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
Important Notice:
28C256T
These data sheets are created using the chip manufacturer's published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
Memory
02.18.02 Rev5
All data sheets are subject to change without notice
13
(c)2001 Maxwell Technologies All rights reserved.
256K EEPROM (32K x 8-Bit) EEPROM
Product Ordering Options
Model Number 28C256T XX X X -XX Feature Access Time
28C256T
Option Details
12 = 120 ns 15 = 150 ns
Screening Flow
Monolithic S = Maxwell Class S B = Maxwell Class B E = Engineering (testing @ +25C) I = Industrial (testing @ -55C, +25C, +125C)
Memory
Package
D = Dual In-line Package (DIP) F = Flat Pack
Radiation Feature
RP = RAD-PAK(R) package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level
Base Product Nomenclature
256K EEPROM (32K x 8-Bit) EEPROM
02.18.02 Rev5
All data sheets are subject to change without notice
14
(c)2001 Maxwell Technologies All rights reserved.

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